SIA811DJ-T1-GE3【PDF 2/12 页】MOSFET P-CH 20V 4.5A SC70-6

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

New Product

SiA811DJ

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient (MOSFET) b, f

t ≤ 5s

R thJA

52

65

Maximum Junction-to-Case (Drain) (MOSFET)

Maximum Junction-to-Ambient (Schottky) b, f

Maximum Junction-to-Case (Drain) (Schottky)

Steady State

t ≤ 5s

Steady State

R thJC

R thJA

R thJC

12.5

62

15

16

76

18.5

°C/W

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

Δ V DS /T J

Δ V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 20

- 16.2

2.1

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

- 0.4

-1

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 8 V

V DS = - 20 V, V GS = 0 V

V DS = - 20 V, V GS = 0 V, T J = 55 °C

V DS ≤ 5 V, V GS = - 4.5 V

V GS = - 4.5 V, I D = - 2.8 A

-8

0.078

± 100

-1

- 10

0.094

nA

μA

A

Drain-Source On-State Resistance a

R DS(on)

V GS = - 2.5 V, I D = - 2.3 A

0.109

0.131

Ω

V GS = - 1.8 V, I D = - 0.54 A

0.153

0.185

Forward Transconductance a

g fs

V DS = - 10 V, I D = - 2.8 A

7

S

Dynamic b

Input Capacitance

C iss

355

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 10 V, V GS = 0 V, f = 1 MHz

75

50

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 10 V, V GS = - 8 V, I D = - 4.5 A

V DS = - 10 V, V GS = - 4.5 V, I D = - 4.5 A

8.5

4.9

0.75

13

7.4

nC

Gate-Drain Charge

Q gd

1.2

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

R g

t d(on)

t r

t d(off)

f = 1 MHz

V DD = - 10 V, R L = 2.2 Ω

I D ? - 4.5 A, V GEN = - 4.5 V, R g = 1 Ω

8

10

35

40

15

55

60

Ω

Fall Time

Turn-On Delay Time

t f

t d(on)

50

5

75

10

ns

Rise Time

Turn-Off DelayTime

Fall Time

t r

t d(off)

t f

V DD = - 10 V, R L = 2.2 Ω

I D ? - 4.5 A, V GEN = - 8 V, R g = 1 Ω

10

20

10

15

30

15

www.vishay.com

2

Document Number: 74460

S-80436-Rev. B, 03-Mar-08

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SIA814DJ-T1-GE3 MOSFET N-CH 30V 4.5A SC70-6

SIA911EDJ-T1-GE3 MOSFET P-CH DL 20V PWRPAK SC70-6

SIA914DJ-T1-GE3 MOSFET DL N-CH 20V PPAK SC70-6

SIA917DJ-T1-GE3 MOSFET P-CH DL 20V PWRPAK SC70-6

SIB406EDK-T1-GE3 MOSFET N-CH D-S 20V SC-75-6

SIB408DK-T1-GE3 MOSFET N-CH D-S 30V PPAK SC75-6L

SIB412DK-T1-GE3 MOSFET N-CH 20V 9A SC75-6

SIB413DK-T1-GE3 MOSFET P-CH 20V 9A SC75-6

相关代理商/技术参数

SIA813DJ-T1-GE3 功能描述:MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SIA814DJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

SIA814DJ-T1-GE3 功能描述:MOSFET 30V 4.5A 6.5W 61mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SiA817EDJ-T1-GE3 功能描述:MOSFET -30V .065Ohm@10V 4.5A P-Ch G-III RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SIA850DJ-T1-GE3 功能描述:MOSFET 190V 0.95A 7.0W RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI-A8W031180EU 制造商:Samsung 功能描述:Bulk

SI-A8W032180EU 制造商:Samsung 功能描述:Bulk

SI-A8W041140EU 制造商:Samsung 功能描述:Bulk